Search results for "Electroabsorption modulators"

Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer

2005

We present experimental results on 40 Gb/s large-signal modulation performance of 1.31 μm monolithic integrated laser-modulator in the InGaAlAs/InP material system, exploiting the gain and absorption properties of an identical multiple quantum well (MQW) active layer. In continuous wave operation, at 15◦ C, the devices achieved threshold currents < 28 mA, fiber coupled optical power levels up to +0.4 dBm. The measured small signal modulation bandwidth was about 32 GHz. An air-cavity based Fabry-Perot interferometer has been realized to characterize the spectral chirp of the integrated structures in the time domain up to 40 Gb/s.